features low cost diffus ed junction low leakage low forward voltage drop high current capability mechanical data cas e:jedec do--41,m olded plas tic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.012ounces,0.34 grams mounting pos ition: any ratings at 25 ambient temperature unless otherwise specified. single phas e,half wave,60 hz,res is tive or inductive load. for capacitive load,derate by 20%. units maximum recurrent peak reverse voltage v rrm v ma x imu m rms v olta ge v rms v ma x imu m dc blo c kin g v oltag e v dc v maximum average forw ard rectified current 9.5mm lead length, @t a =75 peak forw ard surge current 8.3ms s ingle half -sine-w av e superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 0.5a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 maximum reverse capacitance (note1) t rr ns typical thermal resistance (note2) r ja <d typical junction capacitance (note3) c j pf operating junction temperature range t j storage temperature range t stg 3. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. 0.5 0.2 2.5 4.0 2. thermal resistance f rom junction to ambient. - 55 ---- + 150 note: 1. measrued with i f =0.5a, i r =1a, i rr =0.25a. 100.0 - 55 ---- + 150 500 35 15 a 5.0 easily cleaned with alcohol,isopropanol and s im ilar s olvents i f(av) maximum ratings and electrical characteristics the plastic material carries u/l recognition 94v-0 r1200f R1500F 1200 1500 1800 2000 a a 30.0 i fsm i r 1260 2000 1400 1200 840 1500 1050 r1800f r2000f 1800 r1200f --- r2000f high volt age rect ifiers voltage range: 1200 --- 2000 v current: 0.2a to 0.5a do - 4 1 dimensions in millimeters www.diode.kr diode semiconductor korea
amperes amperes amperes capacitance,p f instantaneous forward current fi g. 3 -- peak forward surge curreent fi g. 4 -- typi cal juncti on capaci tance reverse voltage,volts number of cycles at 60hz fi g. 1 -- forward derati ng curve fi g. 2 -- typi cal forward characteri sti cs r1200f --- r 2000f ambient temperature, instantaneous forward voltage, volts peak forward surge current average forward rectified current 1.6 2.6 0.01 0.1 1 . 0 10 3.6 4.6 0.6 t j =25 pulse width=300 www.diode.kr diode semiconductor korea
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